Molecular ion sources for low energy semiconductor ion implantation (invited)
نویسندگان
چکیده
منابع مشابه
Sources and transport systems for low energy extreme of ion implantation
For the past seven years a joint research and development effort focusing on the design of steady state, intense ion sources has been in progress with the ultimate goal being to meet the two, energy extreme range needs of mega-electron-volt and 100’s of electron-volt ion implanters. However, since the last Fortier is low energy ion implantation, focus of the endeavor has shifted to low energy i...
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Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...
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The electron beam method of stepwise ionization to highest charge states has found applications in electron beam ion sources ~EBISs! for accelerators and atomic physics collision experiments as well as in electron beam ion traps ~EBITs! for x-ray and mass spectroscopy. A dense and almost monoenergetic electron beam provides a unique tool for ionization, because radiative recombination by slow e...
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Carbon nanotubes (CNTs) were implanted with thermally decomposed oxygen (O2+) and nitrogen (N2+) ions at an acceleration voltage of 20 V. With a low dose of oxygen ions, the CNT-FET exhibited p-type behaviors with substantial changes in threshold voltage and in the slope of the source-drain current (l(sd)). However, at high dosages, the device exhibited metallic behaviors. After nitrogen doping...
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Radiation enhanced diffusion at the surface of metals has been observed and studied for low-energy nitrogen ions at the surface of copper. The displacement of the target atoms during irradiation creates vacancies and other defects near the surface, thus enhancing the diffusion of implanted materials toward the surface and also into the solid. The mechanism has been studied here by a specia...
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ژورنال
عنوان ژورنال: Review of Scientific Instruments
سال: 2016
ISSN: 0034-6748,1089-7623
DOI: 10.1063/1.4931719